Donor and Acceptor Neutralization in Multicrystalline Silicon | SpringerLink
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Donor and Acceptor Neutralization in Multicrystalline SiliconD. MargadonnaF. FerrazzaR. PeruzziS. PizziniC. AcerboniL. TarchiniWei XiWenA. De LilloConference paper
In order to verify the convenience of employing low cost feedstock for realizing high performance polycrystalline material for solar cells, two different stu first, the possible influence of B-P compensation and microstructure on minority carrier diffusion lengths and, second, the presence of B-O deep centres and their dependence on impurity concentration were investigated. Experimental results show that material with excellent features, approaching those of single crystal, is produced with the directional solidification method, using both compensated and uncompensated feedstock, thus indicating that grain boundaries and other extended defects have little or negligible influence on minority carrier lifetime. Results in CZ material show the presence of a dopant dependent recombination centre related to oxygen content, of still unknown nature which needs closer investigation.Unable to display preview.&(1).M. Beghi et al. “Polycrystalline and amorphous semiconductors” P. Pinard, S. Kalbitzer EDTR, Les Editions de Physique, (1984) pag. 181.(2).M. Gasparini et al. Proc. XVI IEEE PVSC, S. Diego (USA), (USA), (1982) pag. 74(3).D. Margadonna et al. Proc. 8-th EPSEC, Florence (IT), (1988) pag. 1254(4).D. Margadonna et al. Proc. 9-th EPSEC, Florence (FRG), (1989) pag.750(5).W. Kruehler et al. Proc.8-th EPSEC, Florence (IT), (1988) pag.1181(6).S. Pizzini et al. J. Electrochem. Soc. 131, (1984), pag.2128(7).D. Huber et al. Proc. 5-th Int. Symp. On Silicon Mat sc. and technology, Boston (USA) (1986), pag.45(8).P. T. Landsberg et al J. Appl. Phys. 56,(1984) pag. 1696(9).J. G. Fossum et al. Solid State Electronics, 25, (1982) pag.741(10).B.L. Sopori Proc. XX IEEE PVSC, Las Vegas (USA), (1988)D. Margadonna1F. Ferrazza1R. Peruzzi1S. Pizzini2C. Acerboni2L. Tarchini2Wei XiWen24A. De Lillo31.Italsolar S.p.A.Nettuno (RM)Italy2.Universit di MilanoMilanoItaly3.E.N.E.A. CRE CasacciaS. Maria di Galeria (RM)Italy4.Physics Dept.Dalian Univ. of TechnologyChina
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Low Dislocation Density Multicrystalline Silicon...
Low Dislocation Density Multicrystalline Silicon for Photovoltaic Applications
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(EUR 125,00 per month)Polycrystalline silicon (poly silicon) is used in the production of solar cells that use monocrystalline or multicrystalline silicon for substrates.
单晶硅或多晶硅可以用作生产太阳能光伏单元的基质材料。
The recombination activity of grain boundaries (GBs) in casting multicrystalline silicon (mc-Si) was investigated through an electron beam induced current (EBIC) technique.
本文利用电子束诱生电流（EBIC）对铸造多晶硅中晶界的复合特性进行了研究。
The recombination properties of defects in casting multicrystalline silicon (mc-Si) grown by direction controlled solidification method was studied by Electron Beam Induced Currept (EBIC).
本文利用电子束诱生电流（EBIC）对定向凝固生长铸造多晶硅中缺陷的电学性能进行了分析。
Gettering is an effective method to reduce the deleterious metal impurity from multicrystalline silicon(mc-Si).
吸杂是减少多晶硅中有害金属杂质的一种有效手段。
Multicrystalline silicon (mc-Si) has become the dominant material for solar cells.
当前多晶硅已成为最主要的光伏材料。
It was found that precipitation of nickel in cast multicrystalline silicon was about 700℃ , much lower than that in monocrystalline silicon.
相对于直拉单晶硅，镍在铸造多晶硅中存在着更低的沉淀温度，大约在700℃就有明显的镍沉淀生成；
LDK plans to increase its production capacity of multicrystalline wafers from215MW at present to 600MW by mid-2008.
江西赛维计划增加它的多晶硅晶片的产能，从现在的215MW提升到2008年中期的600MW。
The chemical etching method wa applied to form surface texture of multicrystalline silicon in order to reduce the reflectance of the surface.
为了降低光在多晶硅表面的反射，采用化学腐蚀法在其表面制备了绒面。
The performances of multicrystalline silicon solar cells were improved after porous silicon heavy phosphorous diffusion passivation and low frequency plasma hydrogen passivation.
通过多孔硅重磷扩散钝化及低频等离子体氢钝化等多晶硅太阳电池晶界钝化，改善了太阳电池性能。
Oxygen precipitation in cast multicrystalline silicon experienced one-step annealing was investigated.
研究了铸造多晶硅中不同温度单步退火下氧沉淀的形成规律。
The cast processes of multicrystalline silicon were comparatively developed- The research on its defects and impurities was in progress.
现在，其铸造工艺相对成熟：对材料的缺陷和杂质的研究日趋深化；
The heat conducting graphite block is widely applicable to solar multicrystalline silicon ingot production systems and directional solidification systems for metal alloys.
广泛应用在太阳能多晶硅铸 锭系统及金属合金的定向凝固系统中。
With more and more national photovoltaic(PV) engineering starting, the multicrystalline silicon(mc-Si) demand will be increased greatly and the PV industries will develope rapidly.
随着越来越多的国家启动国家性光伏工程，光伏产业必将迎来更加迅猛的发展，对太阳能级多晶硅的需求也将极大的增加。
Sachs expects that new antireflection coatings will further raise multicrystalline cell efficiencies.
萨克斯期望新发展的抗反射涂层，可以更进一步提高多晶矽太阳能电池的效率。
Multicrystalline wafer: The production capacity is expected to reach 8000MW in 2012, and become the major production base of multicrystalline wafer in the world.
年形成8000MW以上产能，成为世界主要太阳能多晶硅片生产基地。
Multicrystalline wafer: The production capacity is expected to reach 8000MW in 2012, and become the major production base of multicrystalline wafer in the world.
年形成8000MW以上产能，成为世界主要太阳能多晶硅片生产基地。
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