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: A therapeutic dose of doxorubicin activates ubiquitin-proteasome
system-mediated proteolysis by acting on both the ubiquitination
a aratus and proteasome
A therapeutic dose of doxorubicin activates ubiquitin-proteasome
system-mediated proteolysis by acting on both the ubiquitination
a aratus and proteasome
阅读人数：46 Tags: 期刊：AMERICAN JOURNAL OF PHYSIOLOGY-HEART AND CIRCULATORY PHYSIOLOGY, 2008; 295 (6): H2541
作者：Liu
JB; Zheng
HQ; Tang
MX; Ryu
YC; Wang
通讯作者：Liu, JB, Guangzhou Med Coll, Dept Pathophysiol, 195 W Dongfeng Rd,
Guangzhou, Guangdong, Peoples R China.
A therapeutic dose of doxorubicin activates ubiquitin-proteasome
system-mediated proteolysis by acting on both the ubiquitination
a aratus and proteasome | cardiomyocyte COOH-terminus of heat shock protein cognate
70-interacting protei heat shock protein 70 | A therapeutic dose of doxorubicin activates ubiquitin-proteasome
system-mediated proteolysis by acting on both the ubiquitination
a aratus and proteasome. Am J Physiol Heart Circ Physiol 295:
H2541-H2550, 2008; doi:10.1152/ajpheart.01052.2008.-The ubiquitin
proteasome system (UPS) degrades a ormal protei and most u eeded
normal protei , thereby playing a critical role in protein homeostasis
in the cell. Proteasome inhibition is effective in treating certain
forms of cancer, while UPS dysfunction is increasingly implicated in
the pathogenesis of many severe and yet common diseases. It has been
previously shown that doxorubicin (Dox) enhances the degradation of a
UPS surrogate su trate in mouse hearts. To addre the underlying
mechanism, in the present study, we report that 1) Dox not only
enhances the degradation of an exogenous UPS reporter (GFPu) but also
antagonizes the proteasome inhibitor-induced accumulation of endogenous
su trates (e. g., beta-catenin and c-Jun) of the UPS in cultured NIH
3T3 cells and cardiomyocyte 2) Dox facilitates the in vitro
degradation of GFPu and c-Jun by the reco tituted UPS via the
enhancement of proteasomal functio 3) Dox at a therapeutically
relevant dose directly stimulates the peptidase activities of purified
20S proteasome and 4) Dox increases, whereas proteasome inhibition
decreases, E3 ligase COOH-terminus of heat shock protein cognate 70 in
3T3 cells via a posttra criptional mechanism. These new findings
suggest that Dox activates the UPS by acting directly on both the
ubiquitination a aratus and proteasome.
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A tract
Original Article
British Journal of Cancer
, 759–770. doi:10.1038/bjc.1971.90
Published December 1971
The Effect Both of Time and Dose A lied on Tumour Incidence Rate in Benzopyrene Skin Painting Experiments
P N Lee and J A O'Neill
A tract
In two separate experiments benzopyrene has been painted regularly on the backs of mice at difference dose levels.
It has been shown that the incidence rate of both tumours and infiltrating carcinomas can be taken as proportional to d
(t — w)
where t is time from first a lication, w and k are co tants independent of dose, and d is the a lied dose.
Extra navigation
ABSTRACT N***IGATION -
ABSTRACT
Princeton University
Princeton, NJ 08544
Dasman Diabetes I titute, Kuwait
15 September 2011 16 September 2011
1200 Market Street, Philadelphia, PA, 19107, United States
04 December 2011 06 December 2011
Prof. Yehezkel Kaufma , Tel Aviv, Israel
British Journal of Cancer
Search:
partner ofMethod for producing a power semiconductor component on a two-sided su trate that blocks on both sides of the su trate
United States Patent 6168978
A tract:
In a method for the production of a power component that blocks on both sides of a su trate, a disc of a first conductivity type is joined with a su trate of a second conductivity type, on a second side of the disc to form a wafer, a trench is produced in the first side of the disc at the edge of a power component on the wafer, a terminal region of the second conductivity type is produced on the first side of the disc, this region containing an edge termination for the reverse blocking ability of the component, and a first layer of the second conductivity type is produced on the exposed surface of the trench, so that an electrical contact is produced between the su trate and the terminal region.
Inventors:
Schulze, Ha -joachim (Ottobru , DE)
A lication Number:
09/243765
Publication Date:
01/02/2001
Filing Date:
02/03/1999
Export Citation:
A ignee:
Sieme Aktiengesellschaft (Munich, DE)
Primary Cla :
Other Cla es:
257/E21.088,
257/E21.599,
257/E29.013,
257/E29.023,
438/455,
438/460
International Cla es:
H01L29/744
H01L21/18
H01L21/332
H01L21/76
H01L21/78
H01L29/06
H01L29/78
H01L29/66
H01L21/02
H01L21/70
H01L29/02
; (IPC1-7): H01L21/332
Field of Search:
438/133, 438/134, 438/135, 438/137, 438/138, 438/140, 438/455, 438/458, 438/460, 438/414, 438/420
View Patent Images: US Patent References:
5882986
March, 1999
Eng et al.
5698454
December, 1997
5362659
November, 1994
Cartagena
5332920
July, 1994
Nakagawa et al.
5330918
July, 1994
Du elday et al.
5072312
December, 1991
Schwarzbauer et al.
3852876
December, 1974
Sheldon et al.
3706129
December, 1972
McCa 3701696
October, 1972
Foreign References:
EP0341075
November, 1989
Symmetrical blocking high voltage breakdown semiconductor device and method of fabrication.
EP0387721
March, 1990
Thyristor having a particular switching behaviour.
WO/1996/003774
February, 1996
SEMICONDUCTOR COMPONENT WITH A HIGH BLOCKING CAPABILITY EDGE TERMINATION
Other References:
Patent A tracts of Japan, Japanese A lication No. 60021884.
Patent A tracts of Japan, Japanese A lication No. 60021887.
Primary Examiner:
Nguyen, Tuan H.
Attorney, Agent or Firm:
Schiff Hardin & Waite
Claims:
I claim as my invention:
1. A method for producing a plurality of vertically-oriented power semiconductor components on a wafer having o osite sides, said power components being di osed on the re ective o osite sides of said wafer and being capable of a uming an electrically blocking state on both of said sides of said wafer, said method comprising the ste of:
providing a disc of a first conductivity type having a surface on a first side, and having a second side;
producing a semiconductor structure comprising a power semiconductor component on said surface of said first side of said disc, said semiconductor structure including at least one trough, of a second conductivity type o osite said first conductivity type, in said surface of said first side of said disc;
providing a su trate of said second conductivity type and joining said second side of said disc to said su trate to form a wafer;
producing a trench in said disc at an edge of said power semiconductor component on said wafer;
producing a terminal region of said second conductivity type on said first side of said disc, said terminal region containing an edge termination for a reverse blocking mode of said power semiconductor component; and
producing a layer of said second conductivity type on an exposed surface of said trench for producing an electrical contact between said su trate and said terminal region.
2. A method as claimed in claim 1 wherein said layer comprises a first layer, and comprising the additional step of producing a second layer of said second conductivity type on said second side of said disc prior to joining said disc to said su trate, and joining said disc to said su trate via said second layer.
3. A method as claimed in claim 2 wherein the step of producing said second layer comprises producing said second layer by boron diffusion.
4. A method as claimed in claim 2 wherein the step of producing said second layer comprises producing said second layer by implanting boron at said second side of said disc and su equently tempering said disc.
5. A method as claimed in claim 4 wherein the step of implanting boron comprises implanting boron with an implantation dose between 10
6. A method as claimed in claim 1 wherein the step of producing said layer comprises producing said layer by boron diffusion.
7. A method as claimed in claim 6 wherein said layer has a thickne of at least 3 μm.
8. A method as claimed in claim 1 wherein the step of producing said layer comprises producing said layer by implanting boron at said first side of said disc and su equently tempering said disc.
9. A method as claimed in claim 8 wherein the step of implanting boron comprises implanting boron with an implantation dose between 10
10. A method as claimed in claim 8 wherein said layer has a thickne of at least 3 μm.
11. A method as claimed in claim 1 wherein the step of producing said terminal region comprises producing said terminal region by boron diffusion.
12. A method as claimed in claim 1 wherein the step of producing said terminal region comprises producing said terminal region by implanting boron at said first side of said disc and su equently tempering said disc.
13. A method as claimed in claim 12 wherein the step of implanting boron comprises implanting boron with an implantation dose between 10
14. A method as claimed in claim 1 wherein the step of producing said terminal region comprises producing said terminal region with a doping which decreases proceeding from said edge.
15. A method as claimed in claim 14 comprising providing said terminal region with field ring structures.
16. A method as claimed in claim 14 comprising providing said terminal region with a laterally, gradually decreasing doping.
17. A method as claimed in claim 1 comprising the additional step of separating said wafer along said trench.
18. A method as claimed in claim 17 wherein the step of separating said wafer comprises sawing said wafer through a middle of said trench.
Description:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a method for the production of a power component on a two-sided su trate which blocks (i.e., is switchable to a non-conducting state) on both sides of the su trate, such as a thyristor or a bipolar tra istor with an i ulated gate (IGBT=I ulated Gate Bipolar Tra istor), of the type wherein semiconductor structures are created on a first side of the surface of a disc of a first conductivity type and the semiconductor structures have at least one trough of a second conductivity type at the surface of the disc.
2. Description of the Prior Art
In large-surface power semiconductors, such as thyristors and gate turn-off thyristors (GTOs), the reverse blocking ability is generally realized by mea of mechanical proce ing such as oblique looping (la ing) or sand blasting (sanding) of positive or negative angles. By beveling at the edge, the surface field can be lowered co iderably, and it thus can be guaranteed that a breakdown occurs i ide the semiconductor rather than at its surface.
Edge beveling is not po ible, however, in small components, such as an IGBT, for example, since it would be very costly and would require a change to a round chip, besides. In addition, co iderably lower penetration depths of the -junctio are used in an IGBT, for example. To a large extent, this rules out the utilization of mechanically produced edge terminatio . Planar edge terminatio such as field ring structures are conventionally used for this purpose. A disadvantage of field ring structures, however, is that, in a component which blocks on both sides, an edge termination is required on each of the front side and back side of the semiconductor disc for both polarity directio . This is po ible only with an expe ive, double-sided photo-technique.
Isolation diffusion is one alternative, i.e., the diffusion of a separating layer into the su trate. A conductive co ection between the front and back sides of the semiconductor disc can be created in the edge region with the separating layer.
Today, isolation diffusion is realized only in the form of an A1 diffusion, since A1 diffuses rapidly, significantly more so than boron, for example. It is disadvantageous, however, that even given the utilization of an A1 diffusion, and given a relatively low disc thickne of 300 μm and a relatively high diffusion temperature of ca. 1240° C., a push-in time of at least 50 hours is required, which is a ociated with a very high material load. Above all, however, the a lication of A1 diffusion in IC lines in which the production of IGBTs occurs is generally not permitted, since A1 can not be masked by SiO
, and cro -contaminatio may arise, which can result in a degradation of the gate-oxide, among other things.
SUMMARY OF THE INVENTION
An object of the present invention is to provide a method for producing a power component that blocks on both sides of a su trate which is easy to realize and which overcomes the aforementioned disadvantages.
The inventive solution is based on the placement of all the edge terminatio of the power component on the front of the component. All proce ing ste in the production of the component thus can be related to the front side. This enables a simplification of the production method, and thus a more cost-effective production than in known methods. Particularly, an isolation diffusion, by boron diffusion, for example, can be realized with relatively little time outlay and low temperature load by mea of a trench etching in the edge region of the discs. To su ort the disc mechanically, the disc to be etched is secured on a carrier su trate.
The inventive method for the production of a number of vertical power components that block on both sides on a wafer includes the ste of producing semiconductor structures on a first side of the surface of a disc, the disc being of a first conductivity type and the semiconductor structures having at least one trough of a second conductivity type at the surface of the disc.
The disc is joined to a su trate of a second conductivity type, on a second side of the disc, to form a wafer. A trench is produced in the disc at the edge of a power component on the wafer. A terminal region of the second conductivity type is produced on the first side of the disc and a first layer of the second conductivity type is a lied on the exposed surface of the trench, so that an electrical contact is produced between the su trate and the terminal region.
A second layer of the second conductivity type is preferably created on the second side of the surface of the disc prior to the co ection to the su trate, and the disc is su equently co ected to the su trate via the second layer. The ace charge region is co equently formed in the disc and not directly over the boundary layer between the disc and the su trate. If the ace charge region were formed around the boundary layer, a higher surface quality or finish would be required, not only in the disc but also in the su trate, which would raise the costs.
In a preferred embodiment of the method, the disc is joined with the su trate into a wafer using the wafer bonding method.
In a preferred embodiment of the method, the first and/or second layer and/or a terminal region is produced by the diffusion of boron, particularly by the diffusion of boroethane.
In another preferred embodiment of the method, the first and/or second layer and/or a terminal region is produced by the implantation of boron. The implantation dose is preferably between 10
. A su equent high-temperature step is nece ary for diffusing-in the boron atoms. This preferably occurs at a temperature of between about 1100 to about 1300° C. over a time period of about 10 hours.
The first layer preferably obtai a thickne of at least 3 μm.
The edge terminatio , which adjoin the terminal region, which is electrically co ected to the second side of the semiconductor disc, as well as at the base region of the second conductivity type on the first side of the semiconductor disc, are preferably created as field ring structures, or generally as a structure with laterally decreasing doping.
If the individual components are operated independently, the semiconductor is preferably separated into individual chi along the trench, it being po ible for the separation to occur by sawing through the middle of the trench.
An advantage of the invention is that, unlike in the realization of an additional edge termination at the anode side (at the collector side), in this arrangement with edge termination at one side, a double-sided photo-technique (which nece arily includes optimally precise pa ivation and co ection ste ) is not nece ary on the anode side (on the collector side), but i tead, all the proce ing ste in the production of the power component can occur on one side thereof. Furthermore, the isolation diffusion with boron doping is po ible given relatively short diffusion times and is thus compatible with IC production.
The power component produced with the inventive method has a reverse blocking ability in addition to a forward blocking ability. Not only is an edge termination for the -junction which blocks in the forward direction produced, but also an edge termination for the -junction which blocks in the reverse direction is realized on the cathode side (emitter side) of the component.
DESCRIPTION OF THE DRAWINGS
FIG. 1 depicts a portion of a power component produced with the inventive method, in cro -section.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
The power component shown in FIG. 1 has a disc 1 of a first conductivity type. The disc 1 in the example is weakly n-doped and thus is referenced n
in FIG. 1. The thickne of the disc 1 can be about 300 μm or le . In general, the thickne and the base doping of the weakly doped silicon disc 1 are selected according to the desired blocking voltage of the power component.
On the first side 3 of its surface 2, the disc 1 is provided with semiconductor structures which include at least one trough 10 of a second conductivity type. The u er section of FIG. 1 is referenced below as being at the emitter side or cathode side, with re ect to these electrodes, and the lower section of FIG. 1 is referred to as being at the collector side or anode side, accordingly. The method for producing semiconductor structures with at least one trough 10 is generally known and need not be detailed herein.
In a first step of the inventive method, the disc 1 is joined to a su trate 5, which is of a second conductivity type and which is depicted beneath disc 1 in FIG. 1. The su trate can have a thickne of about 400 μm, for example. The disc 1 and the su trate 5 have a common boundary layer 11 after they are joined.
The co ection of the disc 1 to the su trate 5 can occur with a "wafer bonding" technique. The proce of wafer bonding is generally known in the field of semiconductor production and need not be detailed herein.
The power component according to FIG. 1 has an additional, second layer 8. In the preferred embodiment of the inventive method, the disc 1 is provided with the second layer 8 on the second side 4 of its surface 2 prior to joining the disc 1 to the su trate 5. The second layer 8 created in the disc 1 is of a second conductivity type, which is o osite the first conductivity type of the disc 1. In the given example, the conductivity type of the disc 1 is referenced n
, and the conductivity type of the second layer 8 is referenced p.
Due to the creation of the second layer 8 in the disc 1, the ace charge region (not depicted) is formed i ide the disc 1 ( ecifically, at the junction between the n
-region of the disc 1 and the p-region of the second layer) and not directly over the boundary layer 11 between the n
doped disc 1 and the p
-doped su trate 5. Without the additional layer 8 in the disc 1, given the formation of the ace charge region in the vicinity of the boundary layer 11, a high surface quality would be required not only for the disc 1 but also for the su trate 5, as well as an extremely defect-free wafer bonding, which would raise the costs of the material, or of the production method.
The attachment of the disc 1 to the su trate 5 effects a higher mechanical stability of the overall structure and enables the etching of a deep trench 7 in the weakly doped silicon disc 1 without fracturing. The su trate 5, due to its thickne of about 400 μm, acts as a stabilizing carrier. Particularly in the case of a low thickne of the weakly doped silicon discs 1, the carrier 5 additionally greatly facilitates the proce ing of the silicon discs 1 in the proce ing sequence, and above all the disc handling in the production of semiconductor components.
The trench 7 is etched into the disc 1 in a next step of the method for the production of the power component. To etch the trench 7 in the disc 1, a mask is placed on the surface of the chip. The mask is structured such that it covers those sectio of the chip which should remain unmodified, thus defining the position of the trenches 7 on the surface of the chip.
The trench 7 preferably has a slightly beveled form in cro -sectio i.e., in cro -section it represents a trapezoid in which the shorter of the two parallel sides is situated below on the su trate side, and the longer of the two parallel sides is situated above and is open. The shorter parallel side and the two legs of the trapezoid define the exposed surface of the trench 7, which is proce ed in a further step.
In this further step of the inventive method for the production of a power component, the exposed surface of the trench 7 is doped, so that a layer 6 of the second conductivity type forms on the surface of the trench 7, i.e., in the example of a power semiconductor given in FIG. 1, a p-doped layer 6.
Besides the surface in the trench 7, a terminal region 9 at the edge of the first side 3 of the surface 2 of the disc 1 is also doped in this step, the layer 6 as well as the terminal region 9 being of the second conductivity type. The terminal region 9 contai the edge termination, required for the reverse blocking ability, of the component. This edge termination can be created in the form of field rings, field plates or a "variation of lateral doping" structure, as well as other conventional variants. In the example depicted in FIG. 1, a "variation of lateral doping" structure is depicted as the edge termination. The trough 10 represents the edge termination for the base region, at the cathode side (emitter side), of the power semiconductor, which is required for the forward blocking ability of the component. The central region of the component, which contai the emitter structure, at the cathode side (emitter side), of a thyristor or an IGBT is not depicted in FIG. 1 for clarity.
In the aforementioned second step of the method, the depth of the trench 7 was selected so that an electrical contact between the su trate 5 and the terminal region 9 can be produced via the layer 6, which was created by the doping of the exposed surface of the trench 7. The depth of the trench 7 depends, among other things, on whether an already doped layer 8 is provided in the disc 1. If a layer 8 is not provided in the disc 1, then the depth of the trench 7 is preferably selected such that the su trate 5 under the disc 1 is exposed. I tead, the disc 1 is provided with an already doped layer 8, then the depth of the trench 7 is preferably selected such that a layer of the disc 1 remai , which has a prescribed thickne . The thickne of this residual layer is preferably defined such that the bottom of the trench 7 extends into the layer 8. The layers 6 and 8 are preferably simultaneously diffused in that previously implanted (acceptor) atoms are diffused-in together. The implantation of the layer 8 should occur prior to the wafer bonding, and the implantation of the layer 6 should occur su equent to the wafer bonding and to the trench etching.
A co ection between an electrode situated on the back side of the component and the front side of the component thus is created by the inventive method for the production of a power semiconductor element. In particular, the conductive co ection between the reverse-blocking edge termination at the cathode side (emitter side) and the p-emitter at the anode side (collector side) is produced by the overla ing of the doping at the bottom of the trench 7 with the doping of the p
-su trate 5 depicted in FIG. 1, and by the overla ing with the conductive layer 6.
Boron is preferably used as dopant in the doping step of the inventive method.
The boron doping for guaranteeing the conductive co ection between the p-emitter at the anode side (collector side) and the reverse-blocking edge termination realized at the cathode side (emitter side) can be realized by mea of a masked boron implantation with a su equent push-in step, for example. An implantation dose between 10
boron atoms per cm
is preferably selected for this purpose. This guarantees agai t a breakthrough of the ace charge region to the surface of the trench. In order to avoid surface influences, the penetration depth of the boron atoms--i.e. the thickne of the layer 6--is preferably at least 3 μm.
In an alternative embodiment of the method, the boron doping occurs by diffusion, e.g. by boroethane diffusion. To this end, an SiO
layer is deposited on the chip prior to the boron diffusion, this layer covering the sectio of the chip which are not to be diffused. The SiO
layer is structured such that it exposes, as a mask, the sectio on the chip surface which should be boron-diffused.
Su equent to the production of a wafer with power semiconductor components with the inventive method, individual components can be separated from one another along the trenches. This separation of the individual elements occurs by sawing, for example. The width of the trenches 7 is preferably selected such that the separation of the individual chi is po ible without complicatio , and without damaging the edge system of the individual chi with the first layer 6 and the terminal region 9.
Although modificatio and changes may be suggested by those skilled in the art, it is the intention of the inventor to embody within the patent warranted hereon all changes and modificatio as reasonably and properly come within the scope of his contribution to the art. | Copyright 2004-2011 FreePatentsOnline.com. All rights reserved. Entrepreneur turned VC
Improving Sales: The Excuse Department is Closed
Mark Suster
. Thanks for visiting!
This article
Most technology startu seem to be funded by product people or busine people. Specifically what is often not in the DNA of founders are sales skills. Nor do they exist in the investors of early-stage companies.
The result is a lack of knowledge of the proce and of sales people themselves.
My first startup was no different. I had never had any sales training so everything we did for the first couple of years was i tinctual. While we did fine learning on the fly, it turned out that a lot of what we did was wrong. I’ve started writing up some of those
and I plan to continue to build that section out over time.
As we grew into several millio of dollars of sales per year it was no longer acceptable to “wing it.”
So I did want any rational person who wants to improve does – I hired a coach. We focused together on improving our sales methodology, our training and our comp pla . These days there are even startu like
to make this easier for all of us. Back then it was a larger than life ex country manager from PTC named Kai Krickel. He taught me much – most of it unconventional. Most of it worked and his philosophies have proved enduring to me.
He called his busine TEDIC. The Excuse Departement is Closed. That mindset always stayed with me and even rung true at the time. Excuses. Whenever I heard why we did #8217;t feel a sales proce at an important customer was going well (or if we lost) I would get involved myself. Invariably the reaso I was hearing why we were #8217;t well positioned versus my own perception were different.
I boil it down to this: sales people are sales people. They are the lifeblood of many companies yet they are different than the traditional technology startup DNA so the ways that you hire, motivate, compe ate and a e performance of these individuals will be different. Obviously to understand a “cla #8221; of people you have to make broad generalizatio . Here are mine.
Sales people:
Are motivated by cash. None of this namby pamby optio stuff or “do it for the team – we’re all in this together” crap. Cash, cash, cash.
Are more mercenaries than mi ionaries. That doe #8217;t make them bad – it just mea that they know that they are “hired gu #8221; and they act accordingly
Many great ones do #8217;t thrive in the early phase of a company where the sales is more co ultative or evangelical. They like a solid product, well defined pricing, good references to sell agai t, a clear quota and well defined competitors. This is why I tell startu that
They are as good at selling you as they are at selling your product to customers. That mea if you do #8217;t understand the way they work you’re susceptible to being blind sided.
Before reading my tongue-in-cheek post, please know that I love sales people. I’ve talked many times on my blog about how they’re the lifeblood of most busine es – even those that pretend like they’re above it all. Treat them well and they’ll love working with you. Treat them like the rest of the company and you’ll struggle to hold on to them.
Here’ what I learned. It’ my guide to understanding when you’re being gamed.
1. Sales people often blame the product
Startu are the art of the po ible. By definition an MVP (minimum viable product) mea there’ room for improvement. Your competitors will always highlight a feature here or a feature there that is better. Features do #8217;t win or lose sales – e ecially in nascent markets. People are buying YOU. They’re buying trust that you’re going to do what you’re saying you’re going to do.
Customer also buy social proof because others are acting as strong references. (there is a nascent industry to try and help you with this, too. The best thinker I met on the topic is Mark Organ who founded
to solve this. They’re in beta). Customers buy solutio to solve their problems. They give orders to people they like, which is why de ite your best well reasoned non-sales ethos – you need to understand that sales people do need money to schmooze.
But what customers do #8217;t do is buy features. Do #8217;t get my wrong – a great looking product can really help su ort a sale.
But customers use features as a rationalization for why they made the decision that they concluded for a complex set of other reaso that they probably do #8217;t even understand. How can I be so sure? Ask yourself how they came to decide what features should they be making the decision upon. Who set in their mind what the “right” feature set was? If it wa #8217;t you, I guarantee you they were influenced by your competitor – either through their sales efforts or through marketing.
So know up front that many times sales people will blame the product when they lose or when they’re losing. It’ never them, their lack of effort or relatio hi .
And as you build out your team and grow you realize that it’ always the other guys fault.It’ why leaders need to be
or you’ll co tantly be gamed. In a startup you soon learn that not only does the sales guys blame the product, but the product guys blame the marketing guys for giving them too many requirements. The marketing guys blame the sales guys who ca #8217;t close their leads. The sales guys in turn say that they did #8217;t get
from marketing.
And they all secretly blame you. “It doe #8217;t look that tough to be a CEO. I’m doing all the hard work anyways.”
Stop the madne . You need to teach your sales team
and make it clear that you do #8217;t lose on features. They can give you product i ut, customer requests and wish lists – sure. But the excuse department is closed.
2. Sales people will often blame your pricing
They lost the deal because your competitors dro ed price. Customers seldom buy on price. They buy on perceived value. Sure, you need to be competitive on price. But a sales person needs to be able to demo trate the busine case of why using your product will deliver more total ROI than your competitors. Otherwise you need not keep building out great features – just always drop your price! Of course that’ not true.
If your team (and you) see a competitor ma ively undercut you on price you sure better be able to sell to your customer that the temporary offset in a cheaper price will be eroded by the much great benefit of working with you.
“Sure, they can sell at 50% of our price. Their customer su ort is much smaller and therefore wo #8217;t be able to re ond to your needs as quickly. We have 12 developers and they have 3. That matters because over the next 12 months our product will continue to pull further away from them. That’ why we raised $5 million from top-tier VCs.
Please call our references. We worked with customer X who saved 38% of their costs in the first year and increased sales by 14%. The pay-back period on our product was 16 months. We have lots of cases of demo trable busine succe .
If we just dro ed prices to match our le funded competitors we would #8217;t be able to keep i ovating and adding value for our clients. If short-term price is your primary drive then our competitor might actually might be a better fit for you. We’re definitely a premium product, which is why we do #8217;t just drop prices to match their moves to “ uy” busine .
Or whatever. You need to justify value. And this has to be led by your sales teams and driven home through training.
Also, do #8217;t give your sales teams too much authority on price negotiatio .Given them small authority to discount, give the sales leader a slightly larger level and anything above that comes to your desk for negotiation. Too big of discount authority will lead to price dro because it’ easier for sales re to drop price than to sell on value and do the hard busine -case work. The excuse department is closed.
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